钛酸钡薄膜的制备及其场发射特性研究  

The Preparation and Field Emission Properties of Barium Titanate

作　　者：刘爱青[1] 元光[1] 顾长志[2] 

机构地区：[1]中国海洋大学物理系,山东青岛266071 [2]中国科学院北京物理研究所,北京100080

出　　处：《真空电子技术》2006年第1期41-43,共3页Vacuum Electronics

摘　　要：利用钛酸钡薄膜替代了金属-氧化物-硅结构冷阴极的氧化物绝缘层,并利用场发射扫描电镜、X射线衍射、EDS分析表征了钛酸钡薄膜。观察到低起始阈值的场发射现象,对可能的场发射机理进行了讨论。The BaTiO3 films were deposited on silicon substrate as insulator layer to substitute the conventional oxide layer in electron emitter with metal-oxide-semiconductor structure. The BaTiO3 films were characterized by scanning electron microscope, X-ray diffraction and energy-disperse spectrum. A field electron emission was observed at bias voltage as low as 3V and a possible mechanism of field emission was discussed.

关 键 词：场发射 钛酸钡 磁控溅射 

分 类 号：O484[理学—固体物理]