HfC涂覆碳纳米管增强场发射性能研究  

Improved Field Emission Properties of HfC-Coated Carbon Nanotubes

作　　者：蒋军[1] 冯涛[1] 张继华[1] 戴丽娟[1] 程新红[1] 宋朝瑞[1] 王曦[1] 柳襄怀[1] 邹世昌[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所半导体功能薄膜工程技术研究中心,上海200050

出　　处：《真空电子技术》2006年第1期48-50,57,共4页Vacuum Electronics

摘　　要：利用PECVD方法在硅衬底上生长碳纳米管薄膜,然后采用IBAD方法在薄膜上沉积5 nm的Hf,在高温下退火后在表面形成HfC。研究了经过HfC处理前后碳纳米管膜的场发射性能,结果表明经过HfC处理后碳纳米管膜的场发射性能得到明显改善,并对提高碳纳米管场发射性能的机理进行了探讨。此方法为提高碳纳米管场发射性能提供了一种新的思路。In this paper, we employed plasma-enhanced chemical vapor deposition method to synthesize the Fe-catalyzed CNTs, then deposited Hf film onto the synthesized CNTs by ion beam assisted deposition method. By annealing at high temperature, HfC was formed by the reactions between Hf and carbon atom. The results show that field emission characteristics of the CNTs can be improved by the HfC-coated surface treatment compared with the synthesized CNTs. In addition, the mechanism of the improved field emission of HfC-coated CNTs is discussed. This method provides a new idea to improve the field emission properties of CNTs.

关 键 词：碳纳米管 场发射 碳化铪 

分 类 号：O462.4[理学—电子物理学]