半导体外延层晶格失配度的计算  

Calculation of the Lattice Mismatch Between Semiconductor Epitaxy and Substrate

作　　者：何菊生[1] 张萌[1] 肖祁陵[1] 

机构地区：[1]南昌大学材料科学与工程学院,江西南昌330047

出　　处：《南昌大学学报（理科版）》2006年第1期63-67,102,共6页Journal of Nanchang University(Natural Science)

摘　　要：比较了晶格失配度的各种定义,建议统一使用同一定义。采用简化模型系统地探讨了各种情况下半导体外延生长层和衬底的二维晶格失配度的计算,最后讨论了结合XRD衍射图谱确定失配度的方法。结果表明,正三角形晶格和长方形晶格匹配,长方形晶格的宽列原子的匹配具有优先性,不受长列原子匹配的影响。长方形的长宽比接近匹配比时,整体匹配较好。The different definitions of lattice mismatch are compared with each other. The suggestion is put forward to use the same definition of lattice mismatch. The calculation way of the lattice mismatch through a new simpilied model between semiconductor epitaxy and substrate are analysed,and the way of determine the lattice mismatch in XRD are also discussed. The atoms along with wideth of rectangle crystal lattice take precedence to match atoms in another two -dimensional crystal lattice, not affected by the atoms along with length.

关 键 词：晶格失配度 体结构 二维晶格 半导体外延层 

分 类 号：O484.1[理学—固体物理] TN304.2[理学—物理]