Design and Manufacture of GeSi/Si Superlattice Nanocrystalline Photodetector  

作　　者：LIU Shu-ping JIA Yue-hu 

机构地区：[1]Taiyuan University of Science and Technology, Taiyuan 030024, CHN

出　　处：《Semiconductor Photonics and Technology》2006年第1期21-24,共4页半导体光子学与技术（英文版）

基　　金：Education Foundation of Shanxi Province(200341)

摘　　要：According to Maxwell’s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is 340nm, the single mode lightwave can be transmitted only at periodic number M≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out.According to Maxwell＇s theory, the optical transmission characteristics in GeSi/Si superlattice nanocrystalline layer have been analyzed and calculated. The calculated result shows that when the total thickness L is 340 nm, the single mode lightwave can be transmitted only at periodic number M≥15.5. In addition, at the direction of transmission, when the transmission distance is larger than 500 μm, the lightwave intensity is decreased greatly. Based on the above parameters, the design and manufacture of GeSi/Si superlattice nanocrystalline photodetector are carried out.

关 键 词：GESI/SI Superlattice nanoerystalline PHOTODETECTOR 

分 类 号：TN256[电子电信—物理电子学]