一种检测薄膜型InSb-In磁阻元件灵敏度的便捷方法  

A New Way to Measure The Sensitivity of The Film InSb-In Magnetoresistive Sensor Easily

作　　者：颜健毅[1] 黄钊洪[2] 

机构地区：[1]华南师范大学信息光电子科技学院量子电子学研究所 [2]华南师范大学信息光电子科技学院

出　　处：《传感器世界》2006年第2期25-28,共4页Sensor World

基　　金：广东省自然科学基金资助项目(项目编号:31515)

摘　　要：本文设计了一种检测方法,它提拱精确可控制、且在一定的条件下磁感应强度的大小是稳定的磁场,同时设计了一种低噪声的放大电路对磁阻元件的输出进行测量。利用这个装置,可以精确地测量薄膜式InSb-In磁阻元件的灵敏度。本文检测并讨论了磁阻式Insb-In磁阻元件在一定的磁偏置的条件下,外加磁感应强度B与磁阻元件的电阻值的变化率间的关系,从而提出了一种精确、便捷的薄膜型InSb-In磁阻元件的测量方法。A new kind of measuring way is introduced in this paper by which a magnetic field with invariable magnetic induction density under some special condition can be presented. A low noise amplification circuit also is designed for measuring the output of the sensor. The sensitivity of the film InSb-In magnetoresistive sensor can be measured easily using this equipment. The relationship between the resistive changing rate of the film InSb-In magnetoresistive sensor and the magnetic induction density around the sensor is discussed and measured. By this way, a new method is put forward to measure the sensitivity of the film InSb-In magnetoresistive sensor easily and accurately.

关 键 词：薄膜磁阻元件 INSB-IN 灵敏度 检测 均匀磁场 磁感应强度 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]