NEA GaAs光电阴极激活工艺研究  

STUDY OF NEA GaAs PHOTOCATHODE ACTIVATION

作　　者：张书明[1] 孙长印[1] 朱李安[1] 赛小峰[1] 程昭[1] 何益民[1] 高鸿楷[1] 侯洵[1] 

机构地区：[1]中国科学院西安光学精密机械研究所半导体室,710068

出　　处：《光子学报》1996年第8期745-748,共4页Acta Photonica Sinica

摘　　要：本文报道了 GaAs 反射式光电阴极的激活工艺过程和结果.通过实验确定了 GaAs表面的热清洁温度,利用钼丝热辐射加热方法达到了比较理想的清洁效果,采用铯分子源和高纯氧作氧源获得了高于1000μA/1m 的激活积分灵敏度.In this paper the process and the result of NEA GaAs photocathode activation are reported. The heat cleaning temperature was detemined by experiments.The better effectiveness of cleaning was got by using radiation from a heated molybdenum filament.The photosensitivity more than 1000 μA/lm was obtained by using molecular cesium and high-purity oxygen.

关 键 词：光电阴极 热清洁 激活 砷化镓 铯分子源 

分 类 号：TN203[电子电信—物理电子学]