Bi过量和Mn掺杂的钛酸铋钠基无铅压电陶瓷  

Mn-doped Lead-free Piezoelectric(Na,Bi)TiO_3 Based Ceramics Compensated with Extra Bi

作　　者：杜鹃[1] 王矜奉[1] 赵明磊[1] 陈洪存[1] 梁兴华[1] 盖志刚[1] 苏文斌[1] 臧国忠[1] 

机构地区：[1]山东大学物理与微电子学院,山东济南250100

出　　处：《电子元件与材料》2006年第4期1-3,共3页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(50572056);山东省重点自然科学基金资助项目(Z2003F04)

摘　　要：采用传统电子陶瓷制备工艺制备(1–y)(Na0.5Bi0.5)TiO3-yBa(ZrxTi1–x)O3无铅压电陶瓷,获得了d33高达185pC/N的0.94(Na0.5Bi0.5)TiO3-0.06Ba(Zr0.055Ti0.945)O3压电陶瓷。对Bi的挥发进行了补偿,添加过量Bi2O3(摩尔分数z=0.08)的钛酸铋钠基压电陶瓷,d33高达218pC/N。研究了Mn掺杂对钛酸铋钠基陶瓷压电、介电性能和损耗的影响,获得了高性能的无铅压电陶瓷,其中d33为214pC/N,kt为0.44,k33为0.52。Lead-free piezoelectric ceramics （1-y）（Na0.5Bi0.5）TiO3-yBa（ZrxTi1-x）O3 were fabricated using the conventional ceramics technique. The composition 0.94（Na0.5Bi0.5）TiO3-0.06Ba（Zr0.055Ti0.945）O3 is obtained with d33 as high as 185 pC/N. By means of compensating the volatilization of Bi2O3, （Na, Bi）TiO3 based ceramics doped with extra 0.08%（mole fraction） Bi2O3 can be obtained with d33 as high as 195 pC/N. The effects of doping Mn on the piezoelectric, dielectric constant and dielectric loss are investigated, and the acquired （Na, Bi）TiO3 based lead-free piezoelectric ceramics have optimal properties： d33=214 pC/N, kt = 0.44, k33 = 0.52.

关 键 词：无机非金属材料 无铅压电陶瓷 掺杂 压电常数 机电耦合系数 

分 类 号：TM282[一般工业技术—材料科学与工程]