2Gbps GaAs单片4bit数模转换器的设计与实现  

Design and Realization of 2Gbps GaAs 4bit DAC

作　　者：张有涛[1] 夏冠群[1] 高建峰[2] 李拂晓[2] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050 [2]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2006年第1期34-37,共4页Research & Progress of SSE

摘　　要：详述了单片超高速2G bps G aA s 4b it数模转换器(DAC)的设计、制造及测试。在南京电子器件研究所标准76 mm G aA s工艺线采用0.5μm全离子注入M ESFET工艺完成流片。芯入输入输出阻抗实现在片50Ω匹配。4 b it DAC的微分非线性(DN L)为±0.22最低有效位(LSB),积分非线性(IN L)为±0.45LSB,达到5.2 b it的转换精度。该单片电路提供差分互补输出,长周期输出特性无漂移。其最高转换速率可达2 G bps,建立时间小于250 ps,电路核心部分功耗为110 mW。Design,realization and test of a high-speed GaAs monolithic 2Gbps 4bit DAC are discussed. This circuit has been fabricated by 0. 5 μm fully ion-implanted GaAs MESFET technology in NEDI φ76 mm GaAs process line. DAC is designed for on wafer I/O impedance matching. Its DNL is ±0. 22LSB, and INL is ±0. 45LSB. The accuracy of this 4bit DAC is up to 5.2 bit. The circuit has two complementary outputs, and its long term characteristic has no drift. The highest conversion rate of the 4bit DAC is 2Gbps, and its settle time is less than 250 ps. The power dissipation of the core circuit is 110 mW.

关 键 词：数模转换器 超高速 砷化镓 金属半导体场效应晶体管 

分 类 号：TN432[电子电信—微电子学与固体电子学]