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机构地区:[1]东南大学MEMS教育部重点实验室,南京210096
出 处:《固体电子学研究与进展》2006年第1期96-99,110,共5页Research & Progress of SSE
基 金:江苏省自然科学基金资助项目(BK2003052);国家自然科学基金项目(60476019)
摘 要:给出了一种完全基于CMOS工艺的、能同时测量风速和风向的二维测风传感器的结构、工作原理及其测试结果。该传感器采用恒温差工作模式,热堆输出电压平均值反映芯片温度和环境温度的差,省去了测温二极管。风速测量采用热损失型原理.因此不存在速度量程问题;同时通过四周对称分布热堆的相对差分输出得到风向,风向的测试和风速无关。测试电路是由普通运放电路组成的控制和测试系统。经过风洞测试,风速的测量可以达到23m/s,风速分辨率达到0.5m/s,风速的最大误差为0.5m/s。传感器的反应时间为3~5秒,整个功率损耗约为50mW。A silicon wind sensor by CMOS IC technology is presented, which can simultaneously measure wind velocity and direction. The whole structure is symmetric, Polysilicon resistors in the center are heaters and four thermopiles surrounding the heaters measure thetemperature. The sensor is operated in the constant-temperature-difference mode. The average of the thermopiles' output expresses the temperature difference between the sensor and the surroundings, so diodes for measuring temperature are not needed. Wind velocity is measured from the output of the heater and the wind direction is measured from the relative output difference of each thermopile. The interface circuits have been designed with popular amplifiers. Wind tunnel measurements have been carried out. The wind velocitie is up to 2:3 m/s, and the resolution of veloci ty is 0. 5 m/s. The error of maximum velocity is no more than 0. 5 m/s. Power consumption is about 500 mW and response time is a few seconds.
关 键 词:二维风速传感器 风向传感器 恒温差模式 互补金属氧化物半导体工艺
分 类 号:TN36[电子电信—物理电子学]
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