纳米ZnO镶嵌SiO_2薄膜的磁控溅射制备和发光性质的研究  

Study of Luminescence Properties of Nano-Size ZnO Embedded in SiO_2 Layer Grown by Radio-Frequency Magnetron Sputtering

作　　者：商红凯[1] 张希清[1] 姚志刚[1] 腾小瑛[1] 王永生[1] 黄世华[1] 

机构地区：[1]发光与光信息技术教育部重点实验室,北京交通大学光电子技术研究所,北京100044

出　　处：《光谱学与光谱分析》2006年第3期415-417,共3页Spectroscopy and Spectral Analysis

基　　金：国家自然科学基金(60476005);国家自然科学基金重点(50532090)项目;教育部留学基金;"973"(2003CB314707)项目资助

摘　　要：采用射频磁控反应溅射方法在Si O2衬底上制备了纳米ZnO镶嵌Si O2薄膜。在室温下利用吸收光谱和光致发光光谱研究了样品的光学性质。发现吸收光谱随纳米ZnO尺寸的减小发生了明显的蓝移,表明随着ZnO尺寸的减小,量子尺寸效应增强,导致带隙展宽,吸收峰蓝移。光致发光光谱在387和441nm附近出现了两个发光带,分析认为紫外发光来源于自由激子的辐射复合,而蓝色发光带来自于氧空位的电子到价带的跃迁,并用时间分辨光谱和发光衰减证实了上述观点。Nano-size ZnO embedded in SiO2 layers were grown by radio-frequency magnetron sputtering. Absorption spectra and PL spectra were employed to study the optical character of the samples at room temperature. Absorption spectra blue-shifted when the size of nano-meter ZnO decreased, which indicated that quantum size effect became stronger with decreasing the size of ZnO. PL spectra show two peaks at about 387 and 441 nm, respectively. It was concluded that the UV emission originates from the radiative recombination of free-exciton, and the blue emission is due to the electron transition from donor levels of oxygen vacancies to the top of valence band. The origin of the two peaks is demonstrated by time-resolved spectra and luminescence decay curve.

关 键 词：纳米ZNO 磁控溅射 吸收 光致发光 

分 类 号：O433.4[机械工程—光学工程]