偏心Bridgman－Hg_（1－x）Cd_xTe晶体生长S－L界面形状的数值模拟  

Numerical Simulation of S-L Interface Shape of Asymmetrical Bridgman-Hg_(1-x)Cd_xTe Crystal Growth

作　　者：王培林[1] 邓开举[1] 张国艳[1] 周士仁 

机构地区：[1]哈尔滨工业大学控制工程系

出　　处：《Journal of Semiconductors》1996年第1期16-20,共5页半导体学报（英文版）

摘　　要：用三维数值模拟方法研究了偏心Ｂｒｉｄｇｍａｎ－Ｈｇ１－ｘＣｄｘＴｅ晶体生长系统Ｓ－Ｌ界面附近的温度分布．考察了偏心程度、安瓿与炉膛直径相对大小以及炉膛温度分布等对倾斜Ｓ－Ｌ界面的影响情况．结果表明，偏心温度场可提高晶片上一较大区域内的横向组分均匀性．ψ＝０。Abstract The temperature distribution around the S-L interface of the asymmetrical Bridgmn-Hg1-xCdxTe crystal growth system has been studied by using the threedimensional numerical analysis method. The effects of asymmetrical degree, the size of the ampoule compared with the furnace and the temperature distribution in the furnace on the inclined S-L interface, etc., have been investigated. The results show that the asymmetrical temperature field is able to increase the radial compositional uniformity in a large area. ψ=0 and the isotherm distribution on the π plane can be used as basis in position determination of the cut slice.

关 键 词：晶体生长 BRIDGMAN法 HGCDTE S-L界面 

分 类 号：O78[理学—晶体学]