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机构地区:[1]大连理工大学三束材料改性国家重点实验室,大连116024
出 处:《金属学报》2006年第4期389-393,共5页Acta Metallurgica Sinica
基 金:国家自然科学基金委员会-中国工程物理研究院联合基金资助项目10476003
摘 要:利用反应磁控溅射方法,制备了调制周期相同而调制比不同的TiN/TaN多层膜.利用XRD,HRTEM和纳米压痕仪分别对多层膜的结构、微观状态和力学性能进行了系统研究.结果表明:调制结构不仅改变多层膜的生长速率,而且能导致多层膜择优生长取向的变化;界面应力的存在使得薄膜生长速率随沉积层厚度的增加而下降;在TiN/TaN多层膜中存在着各自独立外延生长的[111]和[100]两种取向的调制结构,且具有不同的调制周期;调制周期为6 nm左右的TiN/TaN多层膜的硬度与弹性模量分别提高约50%与30%;在调制比为3:1时,硬度最大值为34.2 GPa,弹性模量为344.9 GPa;根据结构和力学性能的分析结果,讨论了TiN/TaN多层膜的硬化机制.TiN/TaN multilayer films with same period but different modulation ratios have been fabricated using reactive magnetron sputtering methods. XRD and HRTEM were used to characterize the structure of the multilayer films and their mechanical properties were measured by a nanoindentation method. The results show that modulation structure affects both the growth rate and preferred growth direction. With the increase of layer thickness (TiN or TAN), the growth rate of the layer decreases. It is found that the multilayer films have two kinds of modulation structures growing respectively along [111] and [100] normal to the films and having slightly different modulation periods. The hardness and moduli of the multilayer film with period of about 6 nm are increased by about 50% and 30%, respectively. The maximum values of hardness, 34.2 GPa and modulus, 344.9 GPa appeared at the modulation ratio of 3 : 1. The hardening mechanism in TiN/TaN multilayers was also discussed.
关 键 词:TiN/TaN多层膜 生长行为 结构特征 力学特性
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