混成式焦平面阵列芯片倒装互连技术研究  

Research on Flip-chip Bonding Techniques for Hybrid Focal Plane Array Applications

作　　者：张国栋[1] 龚启兵[1] 苏宏毅[1] 王海珍[1] 郑克霖[1] 

机构地区：[1]中国空空导弹研究院,河南洛阳471009

出　　处：《红外技术》2006年第3期125-128,共4页Infrared Technology

摘　　要：介绍了为保证倒装焊接性能，设备所采取的措施。对比了不同形貌铟柱的优缺点，分析了互连可靠性与铟柱高度的关系，介绍了考核互连可靠性的方法。通过互连技术研究，我们实现了较高性能的倒装互连，互连条件选择温度在60℃-140℃范围，压力范围0．1克／铟柱-0．5克／铟柱。互连连通率〉99．9％，互连后的芯片组件在低温（77K）与常温（23℃）间不少于100次的反复冲击的情况下，测试接触性能及InSb二极管性能都无变化，满足了互连器件可靠性要求。To achieve good bonding performance, several measures were taken with flip-chip bon the bonding process. Merits and demerits of indium bumps with different shapes were compared. of the relationship between indium bump height and bonding dependability, it is deduced that with enough height are needed to increase bonding reliability. Methods for assessing the bonding also introduced. Based on our research on flip-chip bonding techniques, high performance bond obtained, Results of our research were also desoribed.

关 键 词：焦平面阵列 倒装互连 可靠性 

分 类 号：TN215[电子电信—物理电子学]