还原增感浓度对AgCl光电子衰减的影响  

Influence of Sensitization Concentration on Photoelectron Decay of AgCl Emulsion

作　　者：李晓苇[1] 张伟[1] 张继县[1] 张荣香[1] 田晓东[1] 赖伟东[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《河北大学学报（自然科学版）》2006年第2期148-151,156,共5页Journal of Hebei University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(10274017);河北省自然科学基金资助项目(103097)

摘　　要：还原增感是三大化学增感类型之一.近10年来,还原增感的机理以及过程的控制,越来越受到感光科学工作者的关切和注意.主要利用微波介电检测技术,测得自由光电子与浅束缚光电子衰减行为随还原增感浓度的变化.实验发现:还原增感浓度低时,增感中心起空穴陷阱作用;还原增感浓度高时,增感中心起深电子陷阱作用.根据光电子衰减行为随增感浓度的变化得到了最佳增感浓度.The time-resolved spectra of free and shallow-trapped photoelectron are obtained by microwave dielectric spectrum detection technology for pure and reduction sensitized AgCl emulsion. The photoelectron action of sensitized emulsion is analyzed. The results indicate that the function of reduction sensitization center is hole trap when sensitization concentration is lower and the function of reduction sensitization center is deep electron trap when sensitization concentration is higher. In addition, the best sensitization concentration is obtained from the change of photoelectron decay time with sensitization concentration.

关 键 词：还原增感 微波介电检测 卤化银 光电子 

分 类 号：TN201[电子电信—物理电子学]