激光合成纳米硅的可见发光  

Photoluminescence in Nanosized Silicon Synthesized by Laser Chemical Vapor Deposition

作　　者：王卫乡[1] 张季波 李国明[1] 吴育槐[1] 曾志坚[1] 

机构地区：[1]华南师范大学量子电子学研究所,华南师范大学化学系,中国科学院国际材料物理中心,广东湛江二中

出　　处：《应用激光》1996年第5期193-195,220,共4页Applied Laser

基　　金：广东省自然科学基金;广东省高教厅重点学科资助

摘　　要：研究了激光ＣＶＤ合成纳米硅（平均粒径为１４ｎｍ）的可见发光特性。用３００－４５０ｎｍ波长激发时，在４００－６５０ｎｍ区间观测到了发射宽峰。首次发现粒径大于１０ｎｍ的纳米硅在室温下具有可见发光，该现象可用量子限制／发光中心模型来作定性解释。The photoluminescence of nanosized silicon synthesized by laser chemical vapor deposition has been studied.With the excitation light of 300 - 450nm, a wide photoluminescence was observed between the wavelength of 400 - 650nm. It is the first time that the nanosized silicon with the diameter larger than 10nm presents photoluminescence at room temprature. The quantum confinement/luminescence centers model can be used to interpret the experimental phenomena qualitatively.

关 键 词：纳米硅 光致发光 激光CVD 

分 类 号：TN304.12[电子电信—物理电子学] TN240.5