0．1μm　NMOSFET沟道δ－掺杂与结构特性  

Influence of Channel Delta-Doped Profiles on 0. 1 μm NMOSFET Performance and Reliability

作　　者：刘卫东[1] 李志坚[1] 刘理天[1] 

机构地区：[1]清华大学微电子学研究所

出　　处：《固体电子学研究与进展》1996年第3期206-210,共5页Research & Progress of SSE

摘　　要：沟道δ－形掺杂对于改善极小尺寸ＭＯＳＦＥＴ性能、提高可靠性极其重要。利用能量输运模型（ＥＴＭ），报道了沟道δ－形掺杂分布对０．１μｍ沟长ＮＭＯＳＦＥＴ结构特性的影响，根据漏源电流ＩＤＳ、截止态电流Ｉｏｆｆ、阈值电压ＶＴＨ和Ｓ因子的要求，提出了使性能和可靠性得到优化的δ－形掺杂分布。Ultra-small NMOSFET's with channel delta-doped profiles are promising for the nearfuture ULSIs. Using energy transport model(ETM),this paper reports on the influence of channel delta-doped configuration on the performance and reliability of 0.1μm NMOSFET's.With the proposed doping profiles,0.1 μm high-performance and reliability NMOSFET structure is achieved in terms of the requiremens for optimization of drain currents,off-state leakage currents and threshold voltages as well as subthreshold logic swings.

关 键 词：NMOSFET δ-掺杂 性能 可靠性 微电子学 

分 类 号：TN405.3[电子电信—微电子学与固体电子学]