基于双层电化学结构的微型安培免疫传感器  

Micro Amperometric Immunosensor Based on Electrochemical Measurement for Immobilizing Antibody

作　　者：边超[1] 许媛媛[1] 孙红光[1] 陈绍凤[1] 夏善红[1] 

机构地区：[1]中国科学院电子学研究所传感技术联合国家重点实验室北方基地

出　　处：《仪表技术与传感器》2006年第1期1-3,共3页Instrument Technique and Sensor

基　　金：国家自然科学基金项目(90307014)

摘　　要：文中利用MEMS工艺在硅基底上制备铂微电极芯片,并采用双层电化学结构进行抗体的固定,用于人免疫球蛋白IgG的安培酶免疫检测.第一层为聚吡咯过渡层,第二层为抗体与聚邻苯二胺的共聚层.该传感器工作电压-0.3 V,检测下限5 ng/mL,线性范围5～355 ng/mL,响应时间3～5 min,具有制备简便、响应快、下限低、试剂用量少、微型化、便于集成等优点.A micro Pt amperometric immunoacnsor on silicon wafer based-on MEMS was fabricated to detect human IgG. Antibody was immodized using two - layer polymers. Firstly polypyrrole was electropolymerized on the electrode as the transition layer. Then antibody and poly o - phenylenediaminewas electropolymerized. With the working potential of - 0.3 V, the immunoacnsor displayed a good linear dose response behavior for human IgG concentrations between 5 and 355 ng/mL. Alow detection limit of 5ng/mL and response time of 3 ～ 5 minute were achieved. This micro amperometric immunoacnsor has many advantages such as easy fabrication, fast response time, low detection limit, little reagent, micro bulk and easy integration with IC.

关 键 词：安培酶免疫传感器 电化学聚合 聚吡咯 聚邻苯二胺 IGG 

分 类 号：O646[理学—物理化学] TG115.26[理学—化学]