非晶碳/Mo_2C混合膜冷阴极FED发光显示  

Field Emission Characters of Compound Film of Amorphous Carbon and Mo2C

作　　者：王朝勇[1] 姚宁[1] 张兵临[1] 纠智先[1] 邓记才[1] 袁泽明[1] 

机构地区：[1]郑州大学材料物理教育部重点实验室,郑州450052

出　　处：《微纳电子技术》2006年第4期194-196,共3页Micronanoelectronic Technology

基　　金：教育部科学技术重点资助项目(205091)

摘　　要：对Al2O3陶瓷衬底进行粒度为W20的金刚砂机械抛光,采用磁控溅射方法镀过渡层Mo,对其表面进行Nd∶YAG激光刻蚀处理。最后在微波等离子体增强化学汽相沉积(MPCVD)反应腔中在一定条件下沉积了薄膜,反应气体为CH4和H2。从样品的Raman谱可以看出薄膜有非晶碳成分。样品XRD谱线中有比较明显的晶态Mo2C衍射峰。所制备的样品为非晶碳/Mo2C混合结构薄膜。在高真空室中测量了样品的场发射特性,其开启场强为0.55V/μm,在1.8V/μm电场下测得样品的场发射电流密度为6.8mA/cm2。由样品CCD照片观察其发射特性可以看出,样品发射点密度随场强的增大而增加,发射点比较均匀。同时计算样品在2.2V/μm场强下样品发射点密度大于103/cm2。实验表明该薄膜是一种好的场致电子发射体。Al2O3 was polished by carborundum of W20. Then Mo was sputterea on me substrate by magnetic sputtering method, then it was pretreated by Nd：YAG laser. Amorphous carbon and Mo2C mixture film was prepared using MPCVD system with the reactive gases of CH4 and H2. The microstructure and ingredient were studied by Raman spectrum and X-ray diffraction （XRD） . The field emission characteristics was measured in high vacuum chamber. The turn-on electric field was 0.55 V/μm. The current density of 6,8 mA/cm^2 was obtained at electric field of 1.8 V/trm. The emission sites density was lager than 10^3/cm^2 at the electric field of 2.2 V/μm. The result revealed that the film could be a good kind of field electron emitter.

关 键 词：场发射 微波等离子体化学汽相沉积 非晶碳 碳化钼 

分 类 号：O484[理学—固体物理]