CZ-Si单晶中流动图形缺陷的本性探究  

Investigation on the Nature of Flow Pattern Defects in CZ- Si Crystals

作　　者：乔治[1] 刘彩池[2] 张彦立[1] 史严[1] 

机构地区：[1]石家庄铁道学院数理系,石家庄050043 [2]河北工业大学信息功能材料研究所,天津300130

出　　处：《半导体技术》2006年第4期257-259,共3页Semiconductor Technology

基　　金：国家自然科学基金资助项目(60076001);河北省自然科学基金(50032101)

摘　　要：CZ-Si单晶中的流动图形缺陷(FPDs)是否属于空洞型缺陷,目前尚有争议。通过光学显微镜和原子力显微镜对其结构进行了细致地研究。实验发现,FPDs外形如抛物线,在硅片中呈内高外低分布,并且在其顶端附近还存在一单型或双型的八面体空洞,其尺寸、结构及类型与COPs、LSTDs缺陷都非常相似。所有这些都表明,FPDs为空洞型缺陷。本次实验结果将有助于对空洞型缺陷本性及其消除机制的进一步研究。It＇ s still in dispute that whether the flow pattern defects（FPDs） are void-type defects. The structure of FPDs was investigated in details by optical microscopy and AFM, The experiments showed that the morphology of FPDs was parabola and the density was high in the center and low on the edge of silicon wafers. Single-type and dual-type voids were also found on the tip of FPDs which is very similar to COPs and LSTDs .All the results show that FPDs are void-type defects. And this is very useful to investigate on the nature and annihilation mechanism of voids further.

关 键 词：CZ-SI 流动图形缺陷(FPDs) 空洞型缺陷 

分 类 号：TN304.053[电子电信—物理电子学]