Ⅲ-Ⅴ族氮化物半导体的进展  

Development of Ⅲ-Ⅴ Nitride Semiconductor

作　　者：李彦平[1] 关兴国[2] 

机构地区：[1]石油物探局职工大学,涿州270751 [2]电子部第13研究所,石家庄050051

出　　处：《半导体情报》1996年第5期1-6,共6页Semiconductor Information

摘　　要：90年代初Ⅲ-Ⅴ族氮化物材料的实用化似乎还很遥远,但是自从蓝光GaN/GaInN LED 研制成功之后这个领域发生了巨变。目前,GaN 成为化合物半导体领域中最热门的课题。在下个十年中,基于 GaN 材料的激光器、HV 探测器和大功率高温半导体器件将成为实用产品。In the early 1990's there was only modest interest in Ⅲ-Ⅴ nitride materials,but since then the field has been revolutionized by success in fabri- cating blue LEDs from GaN/InGaN.At present,nitrides probably qualify as the hottest topic in compound semiconductor research,especially among epigrowers.Other devices such as lasers,HV photodetectors and highpower/ high temperature transistors seem to become practical products over the next decade.

关 键 词：氮化物 半导体 Ⅲ-Ⅴ族 

分 类 号：TN304.23[电子电信—物理电子学]