亚微米单元库电路性能参数自动提取技术  

Automatic Extraction of Circuit Parameters for Submicron Cell Libraries

作　　者：姜建东[1] 丁保延[1] 陈旭昀[1] 周汀[1] 周晓方[1] 杨强 郑增钰[1] 

机构地区：[1]复旦大学专用集成电路与系统国家重点实验室

出　　处：《微电子学》1996年第5期297-300,共4页Microelectronics

摘　　要：开发了一种新的单元库电路性能参数自动提取技术。给出了该技术提取流程结构框图，详细阐述了输入电容的自动提取、库单元的行为功能、电路模拟输入文件的产生及计算结果的处理。A new technique has been developed to extract circuit parameters for submicron cell libraries.The extracting process is illustrated.The automatic extraction of input capacitance parameters,the behavioural function of cells in the library,the generation of the input files for circuit modeling and the processing of computing results are described in detail.This new technique has been verified for its feasibility and practicability by the implementation of an actual circuit.

关 键 词：计算机辅助设计 亚微米单元库 参数提取 VLSI 

分 类 号：TN470.2[电子电信—微电子学与固体电子学]