外延片夹层电压数学模型推导  

Derivation of Mathematical Model for Measurement of Sandwiched Layer Voltages in Epitaxial Wafers

作　　者：刘学如[1] 李晓红[1] 

机构地区：[1]电子工业部第24研究所

出　　处：《微电子学》1996年第5期301-304,共4页Microelectronics

摘　　要：讨论了外延片的外延层电阻率、衬底电阻率、探针接触电阻、外延层纵向电阻与夹层电压之间的关系，推导了一种全新的二探针法测量外延片夹层电压的数学公式。Correlations of voltages of the sandwiched layer in epitaxial wafers with epi layer resistivity,substrate resistivity,probe contact resistance and epi layer vertical resistance are discussed.Mathematical expressions are derived for measurements of the sandwiched layer voltage in epi wafers by a new two probe method,thus providing a theoretical basis for the calculation of the sandwiched layer voltage.

关 键 词：半导体材料 外延片 数学模型 硅片表征 

分 类 号：TN304.01[电子电信—物理电子学]