化学气相沉积法制备Ta_2O_5薄膜的研究进展  

Advances in Ta_2O_5 film growth with chemical vapor deposition

作　　者：闫志巧[1] 熊翔[1] 肖鹏[1] 黄伯云[1] 

机构地区：[1]中南大学粉末冶金国家重点实验室,湖南长沙410083

出　　处：《功能材料》2006年第4期511-514,共4页Journal of Functional Materials

基　　金：国家高技术研究发展计划(863计划)资助项目(2002AA305207)

摘　　要：Ta2O5是重要的介电材料和光波导材料。从前驱体的选择方面综述了化学气相沉积法制备Ta2O5薄膜的研究进展,说明了五卤化钽和Ta金属有机化合物对CVD过程的影响,对这两类前驱体的优缺点进行了比较和评述,讨论了Ta2O5的生成机理,并对其发展方向作了简要的展望。Ta2O5 is a kind of important dielectric material and optical waveguide material. Recent advances in the choice of precursors in the process of chemical vapor deposition （CVD） for Ta2O5 film are introduced. The effects for the choice of tantalum halide and Ta-containing metallorganic compound on the CVD process have been illustrated. The advantages and disadvantages of both precursors are compared and reviewed. The transformation mechanism is discussed and the prospect is presented.

关 键 词：化学气相沉积 TA2O5 薄膜 五卤化钽 金属有机化合物 

分 类 号：TB383[一般工业技术—材料科学与工程]