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作 者:欧定斌[1] 甘卫平[1] 何捍卫[2] 张伟[1] 黎晓辉[1]
机构地区:[1]长沙中南大学材料科学与工程学院,410083 [2]中南大学粉末研究院,长沙410083
出 处:《材料导报》2006年第3期144-145,151,共3页Materials Reports
基 金:[军工配套]国防科学技术工业委员会资助项目(2004-1-102)
摘 要:采用直流电沉积的方法研究了阴极电流密度的变化(1mA/cm2、3mA/cm2、5mA/cm2、10mA/cm2)对RuO2·nH2O薄膜附着力和形貌的影响,并探讨了RuO2·nH2O电沉积的机理。采用SEM、能谱仪、XRD对薄膜的形貌、元素、物相分别进行了分析,并用粒度分析仪(DELSA440SXAnalyzerControl)对电沉积液的Zeta电位进行了测试。通过实验可以得出:RuO2·nH2O薄膜厚度随着阴极电流密度的增加而增加,薄膜自然干燥失水后,开裂脱落的倾向随电流密度的增加而增大;当阴极电流密度达到10mA/cm2时,自然干燥后薄膜疏松,附着力差。Effects of the different current density on adhesion and morphology of RuO2·nH2O films are studied by galvanostatic deposition. Mechanism of electrodeposition of hydrous ruthenium oxide is discussed. Morphologies of RuO2 · nH2O films are analyzed by SEM;elements of films are analyzed by EDS; phases of films are analyzed by XRD; Zeta potential of colloid solution is analyzed by DELSA 440SX Analyzer. It can be concluded that thickness of RuO2· nH2O films on tantalum substrate is increased with cathodic current density, but the trend of the crack of RuO2 · nH2O films is increased with cathodic current density after they are dried in atmosphere; RuO2· nH2O film is loose when cathodic current density reaches 10mA/cm^2, the adhesion of RuO2· nH2O film is very poor.
关 键 词:电沉积 RuO2·nH2O薄膜 附着力 形貌
分 类 号:TQ153[化学工程—电化学工业] TQ584
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