离子束溅射制备Si/Ge多层膜及红外吸收性能研究  

Preparation and Infrared Absorption Properties of Si/Ge Multilayer Films by Ion Beam Sputtering

作　　者：刘焕林[1] 郝瑞亭[2] 杨宇[1] 

机构地区：[1]云南大学材料科学与工程系,昆明650091 [2]中国科学院半导体研究所,北京100083

出　　处：《人工晶体学报》2006年第2期280-284,共5页Journal of Synthetic Crystals

基　　金：云南省自然科学基金资助项目(No.2002E0009M)

摘　　要：采用离子束溅射方法在S i衬底上制备S i/Ge多层膜。通过改变生长温度、溅射速率等因素得到一系列S i/Ge多层膜样品。通过X射线衍射、拉曼散射、原子力显微分析(AFM)等表征方法研究薄膜结构与生长条件的关系。在小束流(10mA)、室温条件下制备出界面清晰、周期完整的S i/Ge多层膜。通过红外吸收谱的测量发现薄膜样品具有较好的红外吸收性能。Ion beam sputtering was used to prepare Si/Ge muhilayer films on Si substrates. A series of Si/ Ge muhilayer film samples were prepared by changing the temperature of preparation and the speed of sputtering. The relationship between thin films structure and preparation parameters was studied by X-ray diffraction, Raman scattering and AFM. Si/Ge muhilayer films with clear interface and intact period were prepared under the room temperature and little power（ 10 mA）. It is found that the thin films have good infrared absorption properties by infrared absorption spectrum.

关 键 词：Si/Ge多层膜 离子束溅射 红外探测材料 

分 类 号：O48[理学—固体物理]