Al_2O_3衬底上生长ZnO薄膜的结构和光学特性  

Structural and Optical Properties of ZnO Films on Al_2O_3 Substrates

作　　者：汪洪[1] 苏凤莲[1] 宋学平[1] 刘艳美[1] 李爱侠[1] 周圣明[2] 孙兆奇[1] 

机构地区：[1]安徽大学物理与材料科学学院安徽省信息材料与器件重点实验室,合肥230039 [2]中国科学院上海光学精密机械研究所,上海201800

出　　处：《人工晶体学报》2006年第2期302-305,共4页Journal of Synthetic Crystals

基　　金：安徽省优秀青年科技基金(No.00047208);省高校学术技术带头人后备人选科研基金项目

摘　　要：用脉冲激光沉积法在A l2O3(0001)衬底上沉积了ZnO薄膜。衬底温度分别为300℃、400℃、500℃、600℃和700℃。利用X射线衍射(XRD)和光致发光谱(PL)对薄膜的结构和光学性能进行研究。X射线衍射的结果表明在不同温度下生长的ZnO薄膜均具有高度c轴择优取向,衬底温度400℃时,膜的应力较小质量较高。ZnO薄膜有很强的紫外发光峰,紫外发光峰的强度与衬底温度密切相关,并发现当衬底温度从300℃增到400℃时,紫外发射峰出现6nm的蓝移。ZnO thin films were fabricated by pulsed laser deposition （PLD）technique on Al2O3 substrates. Substrate temperatures were varied in the range of 300-700℃. The structural and optical properties were characterized with X-ray diffraction （ XRD ） and photoluminescence （ PL ）, respectively. XRD results indicated that the ZnO films were all highly c-axis oriented. The rocking curve displayed that the crystal quality of ZnO films obviously improved when the substrate temperature was changed from 300℃ to 400℃. It has been observed that the exciton emission dominates in the photoluminescence spectra, and concluded that the intensity of the UV luminescence strongly depends on the substrate temperatures. The peak location was blue-shift 6nm when the substrate temperature was changed from 300℃ to 400℃ at the same time.

关 键 词：ZNO薄膜 脉冲激光沉积 X射线衍射 光致发光谱 

分 类 号：O484[理学—固体物理]