微波器件及IC用SI－GaAs材料现状及展望  

Current Situation and Prospect of SI-GaAs Used on IC and Microwave Devices

作　　者：刘鹏 

机构地区：[1]淄博开发区金晶电子材料厂

出　　处：《山东电子》1996年第2期35-38,共4页Shandong Electronics

摘　　要：本文介绍了国内外ＳＩ－ＧａＡｓ材料的市场现状及应用，简述了ＳＩ－ＧａＡｓ材料制备新工艺和提高质量水平的途径，指出ＳＩ－ＧａＡｓ材料的发展方向及市场前景，并对我国ＳＩ－ＧａＡｓ材料与国外相比所存在的差距作了分析，提出今后发展的方向。The use of SI-GaAs material and the current situation of its market at home and abroad are described.The new technology for preparation of SI-GaAs material and the ways to improve the material quality are briefly introduced.The developing orientation and market prospect of SI-GaAs material are pointed out.Moreover,the disparity of SI-GaAs material made in our country as compared with overseas materials is analysed.The developing direction ahead of home material is put forward.

关 键 词：微波器件 集成电路 半绝缘砷化镓 半导体材料 

分 类 号：TN12[电子电信—物理电子学] TN304.23