内建电场对GaN/AlGaN单量子点发光性质的影响  

Influence of Built-in Electric Field on Luminescent Properties of Self-formed Single GaN/Al_xGa_(1-x)N Quantum Dots

作　　者：危书义[1] 赵旭[1] 吴花蕊[1] 夏从新[1] 

机构地区：[1]河南师范大学物理与信息工程学院,河南新乡453007

出　　处：《液晶与显示》2006年第2期139-144,共6页Chinese Journal of Liquid Crystals and Displays

基　　金：国家自然科学基金资助项目(No.60476047);河南省教育厅自然科学基础研究计划项目(No.2004140003)

摘　　要：在有效质量近似和变分原理的基础上,考虑量子点的三维约束效应,研究了GaN/AlGaN单量子点发光性质随量子点结构参数(量子点高度L和量子点半径R)的变化。结果表明:内建电场对GaN/AlGaN单量子点的发光波长和激子基态振子强度等发光性质有重要的影响;量子点高度的变化对量子点发光性质的影响要比量子点半径的变化对量子点发光性质的影响更明显。Based on the framework of effective-mass approximation and variational approach, the luminescent properties are investigated theoretically for self-formed wurtzite GaN/A1xGa1-xN single quantum dots. With considering the three-dimensional confinement of electron and hole pair and the strong built-in electric field effects due to the piezoelectricity and spontaneous polarization, the emission wavelength and the oscillator strength as functions of the different structural parameters （the height L and the radial R） are calculated with and without the built-in electric field in detail. The results indicated that the strong built-in electric field has a significant influence on luminescent properties of GaN/ A1xGa1-xN quantum dots. The height of quantum dot has more influence on luminescent properties than the radial of quantum dot with the built-in electric field.

关 键 词：GaN/A1GaN 量子点 内建电场 振子强度 

分 类 号：O472.3[理学—半导体物理]