标准CMOS工艺下Si光电探测器的模拟与设计  

Simulation and Design of Si-photodetector in Standard CMOS Process

作　　者：卞剑涛[1] 陈朝[1] 

机构地区：[1]厦门大学物理系,福建厦门361005

出　　处：《半导体光电》2006年第2期128-132,共5页Semiconductor Optoelectronics

摘　　要：设计了与标准CMOS工艺兼容的硅双光电探测器，并从理论上计算和分析了其绝对光谱响应。0．5pmCMOS工艺条件数值模拟结果显示，在无抗反射膜情况下该探测器在400～900nm波长范围内响应度都在0．2A／W以上，尤其是在短波长处效果比一般的探测器要好。还就反向偏压以及CMOS工艺中介质与钝化层等因素对探测器响应度的影响进行了讨论。A CMOS-process-compatible silicon double photodetector is designed. And the theoretical absolute spectral response of this photodetector is calculated and analyzed. The spectral responsivity in 0. 5 μm CMOS process is simulated. Simulation results show better spectral responsivities especially in the short wavelength range. The responsivity is above 0.2 A/ W within the wavelength range from 400 nm to 900 nm without anti-reflection-coating. The responsivity dependent on the insulated medium and passivation layers in CMOS process and reverse bias is also discussed.

关 键 词：CMOS 光电探测器 硅 

分 类 号：TN364.2[电子电信—物理电子学]