Room-Temperature Ferromagnetism of Ga1-xMnxN Grown by Low-Pressure Metalorganic Chemical Vapour Deposition  

作　　者：陈志涛 苏月永 杨志坚 张焱 张斌 郭立平 徐科 潘尧波 张酣 张国义 

机构地区：[1]School of Physics, Materials Physics Laboratory, Peking University, Beijing 100871 [2]Research Center for Wide-Band Semiconductors, Peking University, Beijing 100871 [3]State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871 [4]Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049

出　　处：《Chinese Physics Letters》2006年第5期1286-1288,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60376005, 60577030, 60325413, and 60444007.

摘　　要：Epitaxial films of Ga1-xMnxN have been grown on c-sapphire substrates by low-pressure metalorganic vapour phase epitaxy. The samples show ferromagnetic behaviour up to a temperature of T - 380 K with hysteresis curves showing a coercivity of 50-100 Oe. No ferromagnetic second phases and no significant deterioration in crystal quality with the incorporation of Mn can be detected by high-resolution x-ray diffraction. The result of x-ray absorption near-edge structures indicates that Mn atoms substitute for Ga atoms. The Mn concentrations of the layers are determined to reach x = 0.038 by proton-induced x-ray emission.Epitaxial films of Ga1-xMnxN have been grown on c-sapphire substrates by low-pressure metalorganic vapour phase epitaxy. The samples show ferromagnetic behaviour up to a temperature of T - 380 K with hysteresis curves showing a coercivity of 50-100 Oe. No ferromagnetic second phases and no significant deterioration in crystal quality with the incorporation of Mn can be detected by high-resolution x-ray diffraction. The result of x-ray absorption near-edge structures indicates that Mn atoms substitute for Ga atoms. The Mn concentrations of the layers are determined to reach x = 0.038 by proton-induced x-ray emission.

关 键 词：SEMICONDUCTORS 

分 类 号：O484[理学—固体物理]