一种高稳定低功耗CMOS过热保护电路的设计  

Design of a High Stability Low Power Consumption CMOS Thermal-Shutdown Circuit

作　　者：石伟韬[1] 蒋国平[1] 

机构地区：[1]电子工程系大连理工大学,辽宁大连116023

出　　处：《电子器件》2006年第2期330-334,共5页Chinese Journal of Electron Devices

摘　　要：采用1.2μmCMOS工艺,设计了一种过热保护电路,并利用CadenceSpectre仿真工具对电路进行了仿真,结果表明,电路的输出信号对电源的抑制能力很强,在3.5V以上的电源电压工作下,输出过热保护信号所产生的过热温度点基本保持不变,约为132℃;同时在3V电源电压工作下,电路功耗约为1.05mW,而在9V的高压下工作,功耗仅为14.4mW。由此可见,此电路性能较好,可广泛应用在各种集成电路内部。Using 1.2μm CMOS technology, this paper presents a thermal-shutdown circuits. This circuit is emulated by using the tool of Cadence Spectre. It shows the circuit has an excellent ability of power rejection. Above the 3.6 V of power, the temperature of thermal-shutdown is about 132℃, which is constant. Meanwhile, the power consumption is little. It is 14. 4 mW under the power of 9 V, but only 1.05 mW under the one of 3 V, Because of the better performances, this thermal-shutdown circuit can be widely used in many kinds of integrated circuits.

关 键 词：CMOS工艺 过热保护电路 低功耗 

分 类 号：TN432[电子电信—微电子学与固体电子学]