一种高精度BiCMOS带隙基准电压源的实现  

Implemented of a Precision BiCMOS Bandgap Voltage Reference

作　　者：刘敏侠[1] 李福德[1] 

机构地区：[1]西安理工大学自动化与信息工程学院,西安710048

出　　处：《电子器件》2006年第2期335-338,共4页Chinese Journal of Electron Devices

摘　　要：在对传统的带隙基准电压源电路分析和总结的基础上,提出了一种基于BiCMOS工艺的,新颖的自偏压共源共栅电流镜结构的高精度带隙基准电压源,利用cadence软件对其进行仿真验证,结果证明了该带隙基准电压源具有低温度系数和高电源电压抑制比,目前在PWM中有着良好的应用前景。This paper is based on the analysis of the traditional bandgap reference, It has presented a new structure voltage reference, which adopts BiCMOS process and self-biased cascode current mirror circuit. We take use of Cadence software to simulate and verify it. The results have proved that the reference has low temperature coefficient and high power-supply rejection ratio. At present, it has a good prospect used in PWM.

关 键 词：带隙基准 电源电压抑制比 共源共栅 温度系数 

分 类 号：TN433[电子电信—微电子学与固体电子学]