一种8 Bit 10 GHz SiGe BiCMOS比较器  

An 8-Bit 10-GHz SiGe BiCMOS Comparator

作　　者：潘杰[1] 杨银堂[1] 朱樟明[1] 

机构地区：[1]西安电子科技大学微电子研究所,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《电子器件》2006年第2期339-343,共5页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助(60476046);国家部委基金资助(51408010304DZ0140)

摘　　要：SiGeBiCMOS提供了性能极其优异的HBT(异质结晶体管),其ft超过70GHz,β>120,高线性,低噪声,非常适合高频领域应用。本文基于SiGeBiCMOS工艺,提出了一种高性能全差分超高速比较器,它由宽带宽前置放大器、改进的主从式锁存器组成。采用3.3V单电压源,比较时钟超过10GHz,差模信号电压输入量程为0.8V,输出差模电压为0.4V,输入失调电压约2.5mV,用于8位两步闪烁式A/D转换器。SiGe BiCMOS technology provides us with ultrahigh speed HBTs. The transistors have excellent linearity（IP3） ,low noise figure（NFmin）,ultrahigh speed（ft≈70 GHz）. An 8-bit fully differential comparator using SiGe BiCMOS is established. It consists of a preamplifier with wide bandwidth, an improved master latch and a slave latch. Its full-scale differential input range is 0. 8 V, its differential output is 0. 4 V, and the maximum clock frequency is over 10G Hz with a single 3. 3V power supply. Its input offset is about 2.5 mV and it can be used in an 8-bit two-step flash ADC.

关 键 词：SIGE BICMOS 异质结晶体管 全差分 超高速 比较器 

分 类 号：TN402[电子电信—微电子学与固体电子学]