适合基站放大器应用的图形化SOILDMOSFET的设计与分析  

A Novel LDMOS Power Amplifier in Patterned-SOI Technology for Base Station Applications

作　　者：程新红[1] 王洪涛[1] 宋朝瑞[2] 俞跃辉[2] 袁凯 许仲德 

机构地区：[1]温州大学物理与电子信息学院,浙江温州325027 [2]中科院上海微系统与信息技术研究所,上海200050 [3]东北微电子所,辽宁沈阳110021

出　　处：《温州师范学院学报》2006年第2期20-24,共5页Journal of Wenzhou Teachers College(Philosophy and Social Science Edition)

基　　金：上海市自然科学基金资助项目(03ZR14109)

摘　　要：设计了一种新型图形化SOI(patterned-Silicon-On-Insulator)LDMOSFET(lateraldouble-diffusedMOSFETs)结构,埋氧层在沟道下方是间断的.工艺和性能模拟分析表明,此结构具有SOI器件低泄漏电流和低输出电容的特性,而且能抑制自加热效应和浮体效应.当漂移区长度为3μm时,开态击穿电压可达到30V、关态电压为71V、截止频率6.2GHz、最大振荡频率20GHz,2GHz时、栅偏压3V时的输出功率为0.8W/mm、功率增益为28dB.这些电学参数适合2G、60V无线通讯基站功率放大器的要求.A novel PSOI （Patterned-Silicon-On-Insulator） LDMOSFET with a silicon window beneath P body is proposed and simulated. The novel LDMOSFET did not degrade the advantage of SOl structure＇s low leakage current and parasitic capacitance, which also suppressed the self-heating effects and floating body effects, The on-state and the off-state breakdown voltage was 30V and 70V respectively. The cut-off frequency and the maximum oscillation frequency was 6,2GHz and 20GHz respectively, the output power and power gain at 2GHz was 0.8W/mm and 28dB respectively, which was sufficient for a 2GHz, 60V- class base station amplifier applications.

关 键 词：图形化SOI LDMOSFET 功率放大器 基站 

分 类 号：TN386[电子电信—物理电子学]