离子束溅射制备Si／Ge多层膜研究  

Research of Si/Ge Multilayer Films by Ion Beam Sputtering

作　　者：刘焕林[1] 郝瑞亭[2] 陈刚[1] 杨宇[1] 

机构地区：[1]云南大学材料科学与工程系,云南昆明650091 [2]中国科学院半导体研究所,北京100083

出　　处：《中国材料科技与设备》2006年第2期55-57,共3页Chinese Materials Science Technology & Equipment

基　　金：云南省自然科学基金资助项目（2002E0009M）

摘　　要：采用离子束溅射方法在Si衬底上制备Si／Ge多层膜，通过改变生长温度、溅射速率等因素得到一系列Si／Ge多层膜样品；通过X射线衍射、Raman散射等表征方法研究薄膜结构与生长条件的关系。在小束流（10mA）、室温条件下制备出界面清晰、周期完整的Si／Ge多层膜。Ion beam sputtering were used to prepare Si/Ge muhilayer films on Si substrates. By changing the temperature of preparation, the speed of sputtering, a series of Si/Ge muhilayer films sample were prepared. The relationship between thin films structure and preparation parameters were studied by X - ray diffraction, Raman scattering. Si/Ge muhilayer films with clear interface and intact period were prepared.

关 键 词：Si/Ge多层膜 离子束溅射 红外探测材料 

分 类 号：O484.1[理学—固体物理] TN304.21[理学—物理]