Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs （100） substrates by using MOCVD  

作　　者：梁松 朱洪亮 潘教青 王圩 

机构地区：[1]National Research Center of Optoelectronic Technology, Institute of Semiconductors Chinese Academy of Sciences, Beijing 100083, China

出　　处：《Chinese Physics B》2006年第5期1114-1119,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China （Grant No 60476009）.

摘　　要：Self-assembled lnAs quantum dots （QDs） are grown on vicinal GaAs （100） substrates by using metal-organic chemical vapour deposition （MOCVD）. An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs （100） substrates. This trend is explained by taking into account the presence of multiatoinic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs（100） substrates are also studied by photoluminescence （PL） . It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.Self-assembled lnAs quantum dots （QDs） are grown on vicinal GaAs （100） substrates by using metal-organic chemical vapour deposition （MOCVD）. An abnormal temperature dependence of bimodal size distribution of InAs quantum dots is found. As the temperature increases, the density of the small dots grows larger while the density of the large dots turns smaller, which is contrary to the evolution of QDs on exact GaAs （100） substrates. This trend is explained by taking into account the presence of multiatoinic steps on the substrates. The optical properties of InAs QDs on vicinal GaAs（100） substrates are also studied by photoluminescence （PL） . It is found that dots on a vicinal substrate have a longer emission wavelength, a narrower PL line width and a much larger PL intensity.

关 键 词：self-assembled quantum dots indium arsenide bimodal size distribution MOCVD 

分 类 号：O413[理学—理论物理]