FeS_2多晶薄膜电子结构的实验研究  

Experimental studies on the electronic structure of pyrite FeS_2 films prepared by thermally sulfurizing iron films

作　　者：张辉[1] 王宝义[1] 张仁刚[1] 张哲[1] 钱海杰[2] 苏润[2] 奎热西[2] 魏龙[1] 

机构地区：[1]中国科学院高能物理研究所核分析技术重点实验室,北京100049 [2]中国科学院高能物理研究所北京同步辐射实验室,北京100049

出　　处：《物理学报》2006年第5期2482-2487,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10275077);中国科学院大型科学仪器专项项目(批准号:U_37)资助的课题~~

摘　　要：用磁控溅射方法制各纯Fe薄膜,并硫化合成FeS2.采用同步辐射X射线近边吸收谱与X射线光电子能谱研究了薄膜的电子结构.结果表明,合成的FeS2薄膜,在费米能级附近,有较强的Fe3d态密度存在,同时,在价带谱中2—10eV处有强度较大的S3p态密度存在;Fe的3d轨道在八面体配位场作用下分别为t2g和eg轨道,实验中由Fe的吸收谱计算得到两分裂能级之差为2·1eV;实验测得FeS2价带结构中导带宽度约为2·4eV,导带上方仍存在第二能隙,其宽度约为2·8eV.Pyrite FeS2 films have been prepared by thermally sulfurizing iron films deposited by magnetron sputtering. The electronic structures were studies by X-ray absorption near edge structure and X-ray photoemission spectrum. The results show that an S 3p valence band with relatively higher intensity compared to the calculation Fermi level of Fe 3d states were detected. A second gap of 2.8eV in exists in 2-10eV range and a high density below the the unoccupied density of states was found above the conduction band which was 2.4eV by experimentally calculation. The difference between t2s and eg which were formed in an octahedral crystal field was computed to be 2.1eV.

关 键 词：磁控溅射 二硫化铁 X射线吸收近边结构 电子结构 

分 类 号：O484.4[理学—固体物理]