Cu掺杂对Fe_xPt_(1-x)薄膜有序化的影响  

The effect of Cu doping on the ordering of Fe_xPt_(1-x) thin films

作　　者：李宝河[1] 冯春[1] 杨涛[1] 翟中海[1] 滕蛟[1] 于广华[1] 朱逢吾[1] 

机构地区：[1]北京科技大学材料物理系

出　　处：《物理学报》2006年第5期2567-2571,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:50571007);北京市教育委员会科技发展计划项目(批准号:KM200610011005)资助的课题~~

摘　　要：利用磁控溅射制备了薄膜厚度为50nm的系列(FexPt1-x)100-yCuy(x=0·46—0·56,y=0,0·04,0·12)样品.利用直流共溅射方法精确控制Fe和Pt的原子比.实验结果表明,当x>0·52时,样品中添加Cu不能促进FePt的有序化,但是对于FePt化学原子定比或富Pt的样品,添加Cu可以促进FePt有序化,而且随着Fe含量的减少,需要更多的Cu添加才能实现较低温度下FePt薄膜的有序化.实验结果表明,原子比(FeCu)/Pt达到1·1—1·2的范围时,即可实现较低温度的有序化.（ Fex Pt1-x ）100-y Cuy （ x = 0.46-0.56, y = 0,0.04,0.12） thin films with a fixed thickness of 50nm have been prepared by magnetron sputtering. The atomic ratio of Fe to Pt atoms was accurately controlled by DC co-sputtering. The ordering parameter of the L10 phase is not enhanced for the films with x 〉 0.52. On the contrary, the ordering process is improved by the addition of Cu for the Pt-rich or stoichiometric thin films. In order to get the ordering of FePt films at a low annealing temperature, the lower the Fe content, the more addition of Cu is needed. It is found that the Llo phase can be obtained after annealing at 350℃ for 20 min only for films with the ratio of the （FeCu）/Pt in the range of 1.1-1.2.

关 键 词：L10-FePt有序相 磁控溅射 有序度 CU掺杂 

分 类 号：TM271[一般工业技术—材料科学与工程]