5×10^(-6)/℃的带隙基准电压源设计  

Design of an A5×10^(-6)/℃ Bandgap Voltage Reference

作　　者：宋志强[1] 吴玉广[1] 李冬林[2] 肖本[1] 

机构地区：[1]西安电子科技大学微电子所,陕西西安710071 [2]北京大学微电子所,北京100871

出　　处：《电子科技》2006年第5期41-44,共4页Electronic Science and Technology

摘　　要：在传统一级温度补偿带隙基准电路的基础上,对电路进行了改进,实现二级温度补偿,该电路可以在-40～115℃范围内,达到平均低于5×10-6/℃的温度系数。整个电路采用Chartered0.35μmCMOS工艺实现,使用Hspice仿真器进行仿真。仿真结果证明此基准电压源具有很低的温度系数。The design of a 2nd order temperature compensation bandgap reference circuit based on the conventional 1st order temperature compensation bandgap reference circuit is described. This circuit has an average temperature coefficient of less than 5×10^-6 per degree at the temperature from -40℃ to 115℃.The bandgap reference is implemented in a standard Chartered dual-gate 0.35μm CMOS process. Simulation results using Hspice tools show that the circuit has a low temperature coefficient.

关 键 词：带隙基准源 CMOS 温度系数 PTAT 温度补偿 

分 类 号：TN710[电子电信—电路与系统]