砷化镓MESFET器件的电路模拟  

CIRCUIT SILIULATION OF GaAs MESFET DEVICES

作　　者：杨国洪[1] 范恒[1] 王碧娟[1] 姚林声 雷少莉 夏冠群[1] 

机构地区：[1]中国科学院上海冶金研究所

出　　处：《功能材料与器件学报》1996年第2期102-108,共7页Journal of Functional Materials and Devices

基　　金：中国科学院"八五"重大课题

摘　　要：鉴于器件模拟参数在电路模拟中的重要性，本文选择了较为理想的模型参数提取方法─统计试验法，并从理论上解决了该方法在迭代求解过程中存在的隐函数问题，以及解的唯一性问题。同时提出了加速求解的方法，在此基础上设计的软件可获得精确的器件模型参数。该软件与通用的ＳＰＩＣＥ３集成为一个针对ＧａＡｓＭＥＳＦＥＴ器件的电路模拟系统。本文给出了该系统对不同的电路形式在不同的器件参数下的模拟结果，为我们的ＧａＡｓ６００门门阵列，四位同步计数器电路等课题的成功研制，发挥了重要的作用。Because of the importance of model parameters during circuit simulation, a more proper method, the statistical experimental method, was chosen for extraction of device model parameters.The problems of hidden function, existing in solving the equations iteratively, and the uniquencess of solution have been resolved theoretically.A method for accelerating the solving process was propossed.The accurate device model parameters can be obtained using the software developed on this basis.Combined this software with the general SPICE3A, a package of device simulation for GaAs MESFET was built. The simulation results were presented for two circuits with different device parameters.It was proved that this method is helpful in studying and manufacturing the 600 gate GaAs gate-array and 4-bit synchronized count devices.

关 键 词：电路 模拟 砷化镓 MESFET器件 

分 类 号：TN304.23[电子电信—物理电子学]