真空微电子管的研究  

A STUEY OF VACUUM MICROELECTRONIC TRIODE

作　　者：关辉[1] 朱长纯[1] 陈宁[1] 张声良[1] 

机构地区：[1]西安交通大学真空微电子与微电子机械研究所,西安710049

出　　处：《真空科学与技术》1996年第5期309-315,共7页Vacuum Science and Technology

基　　金：国家自然科学基金

摘　　要：综合了已有的真空微电子器件理论的研究成果，提出了真空微电子三极管优化模型，并且进行了初步计算，得到了真空微电子三极管优化模型的理论特性。同时，利用独创的无版光刻工艺制作了真空微电子三极管，进行了测试，并且与理论结果进行了比较。In this paper, we have set up an optimized model of vacuum microelectronic triode based onpresent achievements of the theory on vacuum microelectronics devices- Furthermore, we have obtainedtheoretical characteristics of vacuum microelectronic triode by means of preliminary calculation. In addition,we have fabricated vacuum microelectronic triode by means of no-mask photoetching presented by usfirstly,and have tested it,the result of which is compared with the theoretical value.

关 键 词：计算机模拟 真空器件 微结构 微电子管 

分 类 号：TN103[电子电信—物理电子学]