高效率平面磁控溅射器的研制  

A STUDY OF THE HIGH-EFFICIENCY PLANAR MAGNETRON SPUTTERING GUN

作　　者：应春[1] 沈杰[1] 唐沪军[1] 杨锡良[1] 章壮健[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术》1996年第6期402-408,共7页Vacuum Science and Technology

摘　　要：介绍一种新型磁控溅射装置。它采用两块极性相对的环状磁铁的设计方法，通过扩大靶表面的等离子放电区域面积，使传统磁控溅射枪使用中经常受到的两个限制──溅射速率与靶的利用率得到了较大的改善。实验中铜靶在溅射功率密度为11W／cm^2时溅射速率约为800nm／min，如果继续提高功率则可获得更高的速率。而靶的利用率可达64％左右。另外，在认为出射粒子符合cos^nθ分布的前提下，发现当n＝3．3时，实验数据和理论数据符合得较好。In this paper,a new magnetron sputtering apparatus with two annular magnets facing each other is introduced. The limited deposition rate and the lifetime of the target,which are the general troubles with conventional planar magnetrons,have been greatly improved. The deposition rate of Cu films is about 800nm/min at the sputtering power density of 11W/cm^2,and can reach a higher value with larger input power.Target utilization ratio is improved to about 64%. Furthermore,the angular distribution of the particles sputtered has been studied. According to the hypothesis of cos^nθ distribution,we found a good coincidence between the calculations and the experimental results when we set 'n' equal to 3. 3.

关 键 词：磁控溅射器 沉积速率 靶利用率 溅射 薄膜 

分 类 号：TN305.92[电子电信—物理电子学]