反应离化团束（RICB）法生长CN硬质薄膜  

CARBON NITRIDE FILMS DEPOSITED BY REACTIVE IONIZED CLUSTER BEAM METHOD

作　　者：谢俊清[1] 冯嘉猷[1] 郑毅[1] 

机构地区：[1]清华大学

出　　处：《材料研究学报》1996年第5期525-528,共4页Chinese Journal of Materials Research

基　　金：国家自然科学基金

摘　　要：用反应离化团束（ＲＩＣＢ）法，以低分子量聚乙烯为蒸发材料，氨气为反应气体，在ＮａＣｌ（１００）和Ｓｉ（１００）衬底上淀积Ｃ—Ｎ薄膜。透射电子衍射（ＴＥＭ）分析表明薄膜中含有β—Ｃ３Ｎ４晶粒，Ｘ射线光电子谱（ＸＰＳ）和红外吸收谱（ＩＲ）表明薄膜中存在Ｃ、Ｎ原子的化学键合。Carbon nitride thin films have been prepared by reactive ionized cluster beam (RICB)technique on Si(100)and NaCl(100) substrates, using low molecular weight polyethylene as evaporation material and ammonia as reactive gas. As revealed by transmission electron microscopy, the film contains β-C3N4crystallites. X-ray photoelectron spectroscopy (XPS) measurement and infra-red(IR) absorption measurement indicate that nitrogen is chemically bonded to carbon in the films.

关 键 词：离化团束 C-N薄膜 薄膜 

分 类 号：O484.1[理学—固体物理]