双极型晶体管损坏与强电磁脉冲注入位置的关系  

Damage of bipolar junction transistor under electromagnetic pulse injected from different electrode

作　　者：周怀安[1] 杜正伟[1] 龚克[1] 

机构地区：[1]清华大学电子工程系微波与数字通信技术国家重点实验室,北京100084

出　　处：《强激光与粒子束》2006年第4期689-692,共4页High Power Laser and Particle Beams

基　　金：国家863计划项目资助课题

摘　　要：利用时域有限差分法,对双极型晶体管(BJT)在强电磁脉冲作用下的瞬态响应进行了2维数值模拟,研究了电磁脉冲从不同极板注入时BJT的响应情况,根据温度分布的集中程度分析了发生烧毁的难易程度。模拟得出:发射极注入最容易导致烧毁,集电极注入次之,基极注入相对不易导致烧毁;发射极注入烧毁所消耗能量随着脉冲电压上升而下降,到30 V以后基本与电压的升高无关,集电极注入烧毁所消耗的能量则随着电压上升而上升,到100 V以后由于BE结上热点的出现而开始下降。By the two-dimensional finite-difference time-domain simulation, the damage of bipolar junction transistor（BJT） under high power electromagnetic pulses was studied, considering the different response of BJT under the electro-magnetic pulse injected from different electrode. The possibility of burnout was analyzed according to the temperature concentration. The simulation results show that the emitter injection is easier to burnout the BJT than the collector injection, and the base injection is relatively difficult. The energy needed for burnout decreases with the magnitude of the pulse in the case of emitter injection, while it becomes independent of the magnitude that is higher than about 30 V. The energy needed for burnout increases with the magnitude of the pulse in the case of collector injection, while it starts to decrease with the magnitude higher than about 100 V.

关 键 词：2维器件数值模拟 电磁脉冲 双极型晶体管 烧毁 

分 类 号：TN322.8[电子电信—物理电子学]