MEMS热激发红外脉冲光源  

MEMS Thermal-induced Pulsed Infrared Light Sources

作　　者：吴飞蝶[1] 纪新明[1] 王建业[1] 周嘉[1] 黄宜平[1] 包宗明[1] 鲍敏杭[1] 

机构地区：[1]复旦大学微电子系,上海200433

出　　处：《光电子技术与信息》2006年第3期38-42,共5页Optoelectronic Technology & Information

摘　　要：设计制作了不同结构、不同图形尺寸的铂金薄膜热激发MEMS红外光源,并对其辐射性能作了测试比较。测试结果显示,发射光谱带在2-4μm范围内有比较强的辐射能量,调制频率在20-40 Hz之间有较好的调制度。这些特性已经符合多数红外传感器的要求。Different structures and patterns of MEMS infrared light sources are obtained from heated platinum films. The characteristic is described and compared. The emission spectrum is relatively strong in the wavelength of 2-4 μm excited at appropriate electric power. Reasonable good modulation can be obtained at 20 Hz and higher. Such specifications meet the requirements of various IR gas sensors.

关 键 词：红外光源 发射率 气体传感器 辐射材料 

分 类 号：TM923.3[电气工程—电力电子与电力传动]