MEVVA离子源制备Fe/Si系薄膜的颗粒污染问题  

Particulate contamination of Fe/Si Thin film when prepared with MEVVA ion Source

作　　者：胡冰[1] 李晓娜[1] 王秀敏[2] 董闯[1] 

机构地区：[1]大连理工大学三束国家重点实验室,辽宁大连116024 [2]大连理工大学材料工程系,辽宁大连116024

出　　处：《真空》2006年第3期21-24,共4页Vacuum

摘　　要：研究了M EVVA离子注入机在F e/S i系薄膜制备过程中产生的颗粒污染问题以及颗粒污染对薄膜质量带来的影响。选取不同制备条件下的F e/S i薄膜,采用电子探针、透射电镜等分析手段对颗粒污染给F e/S i薄膜所造成的影响进行了详细的分析和讨论。分析结果表明,M EVVA源离子注入机产生的颗粒污染主要包括F e、A l、C、O等几种元素,这其中F e和A l元素的污染较为严重。不同注入时期引入的颗粒对F e/S i系薄膜的质量会产生不同程度的影响,针对不同的影响可以找到一些解决方法来克服薄膜质量下降的问题。The formation process of particulate contamination and its influence on the quality of Fe/Si thin film prepared with MEVVA iron source were investigated by using Electron Probe Microanalysis （EPMA） and transmission electron microspcopy （TEM）. It was found that the particles formed are composed of different elements, such as iron, aluminum, carbon and oxygen, where iron and aluminum are major. Moreover, the influence of particulate contamination on the quality of Fe/Si film changes with different ion-implanting phases in the whole preparation process. Some solutions were proposed correspondingly to the quality problems caused by particulate contamination.

关 键 词：颗粒污染 MEVVA源 离子注入 Fe/Si薄膜 

分 类 号：TB43[一般工业技术]