BaSnO_3陶瓷的制备及其电性能研究  

Preparation and Electric Properties of BaSnO_3 Ceramics

作　　者：王正宇[1] 周方桥[1] 陈志雄[1] 

机构地区：[1]广州大学物理与电子工程学院,广东广州510405

出　　处：《电子元件与材料》2006年第6期58-60,63,共4页Electronic Components And Materials

摘　　要：以BaCO3、SnO2为原料，微量SiO2、Bi2O3、Sb2O3作烧结助剂，Ta2O5作施主，采用传统的固相反应法，制备出相对密度迭97％。99％，平均粒径约为8μm的BaSnO3半导体陶瓷。采用Na2CO3或Li2CO3与Mn（NO3）2的组合作受主掺杂可有效增强BaSnO3陶瓷的晶界效应。当x（Mn（NO3）2）为1％时，BaSnO3陶瓷电阻率达3．3×10^6Ω·cm，晶粒电阻率为4．3Ω·cm,视在介电常数为1．9Х10^4（1kHz），经电导激活能测试，估算出晶界势垒约为0．5eV。Using BaCO3 and SnO2 as starting materials, a little of SiO2, Bi2O3 and Sb2O3 as additives and Ta2O5 as donor, semiconducting BaSnO3 ceramics with 97%～99% of theoretic density and 8μm of average grain size were prepared by conventional solid-state reaction method. The effect of grain boundaries was enhanced effectively by using Na2CO3 or Li2CO3 doping with Mn（NO3）2 as acceptors. When x（Mn（NO3）2） is 1%, the BaSnO3 ceramics have the resistivity 3.3×10^6 Ω·cm and the grain resistivity 4.3 Ω· cm, apparent dielectric constant is 1.9×10^4 （lkHz）, and the grain boundary barriers estimated by determinting the conduction activation energies is about 0.5 eV.

关 键 词：无机非金属材料 BaSnO3陶瓷 电子陶瓷制备技术 电性能 

分 类 号：TN304[电子电信—物理电子学]