室温下Si/Si_(1-x)Ge_x共振隧穿二极管的数值模拟  

Numerical Simulation of Si/Si_(1-x)Ge_x Resonant Tunneling Diode at Room Temperature

作　　者：李涛[1] 余志平[1] 王燕[1] 黄雷[1] 向采兰[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《Journal of Semiconductors》2006年第5期869-873,共5页半导体学报（英文版）

基　　金：国家重点基础研究发展规划资助项目(批准号:041505002)~~

摘　　要：采用量子水动力学(QHD)模型模拟了35nmSi/Si1-xGex空穴型共振隧穿二极管(RTD)在室温下的I-V特性.模拟过程中,引入secondupwind,Schafetter-Gummel(SG)和二阶中心差分法相结合的离散方法对方程组进行离散,保证了结果的收敛性.还模拟了不同的器件结构,对结果的分析表明器件的势垒厚度和载流子有效质量都会对RTD的负阻效应产生影响.在室温下(T=293K),当x=0·23时,模拟结果的峰谷电流比为1·14,与实验结果相吻合.I-V curves of a 35rim p-type Si/Si1-xGex resonant tunneling diode （RTD） are simulated with the quantum hydrodynamic （QHD） model. An integrated difference scheme including the Schafetter-Gummel method,second upwind method, and second-order central difference method is used to discretize the QHD equations,maintaining both accuracy and stability. Investigations of some structural modifications are also carried out, The analytical results indicate that both quantum barrier thickness and hole effective mass affect the NDR characteristics of Si/Si1-xGex RTDs, The simulated peak-to-valley current ratio of 1.14 at 293K agrees with the experimental result when x = 0.23.

关 键 词：Si/Si1-xGex共振隧穿二极管 量子水动力学模型 离散方法 轻重空穴 峰谷电流比 

分 类 号：TN312[电子电信—物理电子学]