双面阶梯埋氧型SOI结构的耐压分析  

Breakdown Voltage Analysis for a Double Step Buried Oxide SOI Structure

作　　者：段宝兴[1] 张波 李肇基[1] 

机构地区：[1]电子科技大学IC设计中心,成都610054

出　　处：《Journal of Semiconductors》2006年第5期886-891,共6页半导体学报（英文版）

摘　　要：在单面阶梯埋氧型SOI结构的基础上,提出了一种双面阶梯埋氧SOI新结构.双面阶梯的电荷积累作用使其纵向电场突破了传统上受界面电荷为零限制的3倍关系,埋氧层的电场可以高达200V/μm;而且双面阶梯对表面电场的调制作用使其表面电场达到近乎理想的均匀分布.借助二维MEDICI数值分析软件,验证了此结构具有同时优化横向SOI基高压器件横、纵向电场,提高击穿电压的优点.A novel structure with a double step buried oxide SOl （D-SBOSOI） is developed on the basis of single step buried oxide structure. The relation of three times the vertical electric field between the silicon and buried oxide in conventional structure has been broken due to charge accumulation on the step buried oxide in D-SBOSOl,resulting in an electric field of 200V/μm in the buried oxide. Furthermore, the surface electric field in this structure reaches nearly ideal uniform distribution due to the additive electric field modulation by double step buried oxide, The results show that the breakdown voltage is increased because the vertical and lateral fields are optimized in this structure by virtue of 2D MEDICI simulation.

关 键 词：双面阶梯埋氧SOI 电荷积累 表面电场 击穿电压 

分 类 号：TN403[电子电信—微电子学与固体电子学]