C掺杂SiGe HBT  

Carbon Doped SiGe Heterojunction Bipolar Transistors

作　　者：陈庆华[1] 张庆中[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《微电子学》2006年第3期296-299,共4页Microelectronics

摘　　要：硼的瞬时增强扩散(TED)所造成的外扩散将对双极晶体管的性能产生不利影响。在HBT的SiGe区加入C(<1020cm-3),能够抑制掺杂硼的外扩散。文章讨论了C掺杂的SiGe∶CHBT在性能和工艺上的优势。SiGe∶C HBT的静态参数优于普通SiGe HBT。同时,由于SiGe∶C HBT允许高浓度的硼存在于很薄的SiGe基区层,甚至在外延后经注入和退火仍可保持很高浓度的硼掺杂,所以,SiGe∶C HBT的高频特性有很大的提高。Incorporation of carbon（〈10^20 cm^-3） into SiGe region of a heterojunction bipolar transistors （HBT） can significantly suppress boron outdiffusion caused by suhsequent processing steps, especially transient enhanced diffusion （TED）. Performance improvenment and process margins in carbon doped SiGe heterojunction bipolar tech- nology are discussed. SiGet C HBT＇s exhibit superior static performances over conventional SiGe HBT＇s. Moreover, carbon also enhances the high frequency performance, as it allows for high level of B doping, even after postepitaxial implantation and annealing, in a very thin SiGe base layer without outdiffusion from SiGe.

关 键 词：瞬时增强扩散 C掺杂SiGe 异质结双极晶体管 

分 类 号：TN325[电子电信—物理电子学]